RN1707JE(TE85L,F)

RN1707JE(TE85L,F)

Part Number: RN1707JE(TE85L,F)
Product Classification: Bipolar Transistor Arrays, Pre-Biased
Manufacturer: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 2NPN 50V 100MA ESV
Packaging: Cut Tape (CT)
ROHS Status: Yes
Currency: USD
PDF: Documents

Specification

  • Part Status Active
  • Mounting Type Surface Mount
  • Frequency - Transition 250MHz
  • DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
  • Current - Collector Cutoff (Max) 500nA
  • Current - Collector (Ic) (Max) 100mA
  • Voltage - Collector Emitter Breakdown (Max) 50V
  • Power - Max 100mW
  • Resistor - Base (R1) 10kOhms
  • Resistor - Emitter Base (R2) 47kOhms
  • Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
  • Package / Case SOT-553
  • Transistor Type 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
  • Supplier Device Package ESV