SIHG125N65E-GE3

SIHG125N65E-GE3

Part Number: SIHG125N65E-GE3
Product Classification: Single FETs, MOSFETs
Manufacturer: Vishay Siliconix
Description: E SERIES POWER MOSFET 650 V (D-
Packaging: Tube
ROHS Status: Yes
Currency: USD
PDF: Documents

Specification

  • Mounting Type Through Hole
  • Part Status Active
  • FET Type N-Channel
  • Technology MOSFET (Metal Oxide)
  • Drive Voltage (Max Rds On, Min Rds On) 10V
  • FET Feature -
  • Grade -
  • Qualification -
  • Operating Temperature -55°C ~ 150°C (TJ)
  • Supplier Device Package TO-247AC
  • Package / Case TO-247-3
  • Current - Continuous Drain (Id) @ 25°C 27A (Tc)
  • Vgs (Max) ±30V
  • Gate Charge (Qg) (Max) @ Vgs 57 nC @ 10 V
  • Drain to Source Voltage (Vdss) 650 V
  • Vgs(th) (Max) @ Id 5V @ 250µA
  • Power Dissipation (Max) 208W (Tc)
  • Rds On (Max) @ Id, Vgs 120mOhm @ 12A, 10V
  • Input Capacitance (Ciss) (Max) @ Vds 1938 pF @ 100 V