TW048U65C,RQ

TW048U65C,RQ

Part Number: TW048U65C,RQ
Product Classification: Single FETs, MOSFETs
Manufacturer: Toshiba Semiconductor and Storage
Description: N-CH SIC MOSFET, 650 V, 0.048 (T
Packaging: Cut Tape (CT)
ROHS Status: Yes
Currency: USD
PDF: Documents

Specification

  • Part Status Active
  • Mounting Type Surface Mount
  • FET Type N-Channel
  • FET Feature -
  • Grade -
  • Qualification -
  • Drain to Source Voltage (Vdss) 650 V
  • Current - Continuous Drain (Id) @ 25°C 39A (Tc)
  • Power Dissipation (Max) 132W (Tc)
  • Operating Temperature 175°C
  • Technology SiCFET (Silicon Carbide)
  • Vgs (Max) +25V, -10V
  • Drive Voltage (Max Rds On, Min Rds On) 18V
  • Package / Case 8-PowerSFN
  • Supplier Device Package TOLL
  • Gate Charge (Qg) (Max) @ Vgs 41 nC @ 18 V
  • Vgs(th) (Max) @ Id 5V @ 1.6mA
  • Input Capacitance (Ciss) (Max) @ Vds 1362 pF @ 400 V
  • Rds On (Max) @ Id, Vgs 71mOhm @ 20A, 18V