RN1710JE(TE85L,F)
Part Number:
RN1710JE(TE85L,F)
Product Classification:
Bipolar Transistor Arrays, Pre-Biased
Manufacturer:
Toshiba Semiconductor and Storage
Description:
TRANS PREBIAS 2NPN 50V 100MA ESV
Packaging:
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specification
- Part Status Active
- Mounting Type Surface Mount
- Frequency - Transition 250MHz
- Current - Collector Cutoff (Max) 100nA (ICBO)
- Current - Collector (Ic) (Max) 100mA
- Voltage - Collector Emitter Breakdown (Max) 50V
- Power - Max 100mW
- Resistor - Emitter Base (R2) -
- Resistor - Base (R1) 4.7kOhms
- Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
- Package / Case SOT-553
- DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA, 5V
- Transistor Type 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
- Supplier Device Package ESV