G01N20LE

G01N20LE

Part Number: G01N20LE
Product Classification: Single FETs, MOSFETs
Manufacturer: Goford Semiconductor
Description: N200V,RD(MAX)<850M@10V,RD(MAX)<9
Packaging: Cut Tape (CT)
ROHS Status: Yes
Currency: USD
PDF: Documents

Specification

  • Part Status Active
  • Mounting Type Surface Mount
  • FET Type N-Channel
  • Technology MOSFET (Metal Oxide)
  • Vgs (Max) ±20V
  • FET Feature -
  • Grade -
  • Qualification -
  • Operating Temperature -55°C ~ 150°C (TJ)
  • Package / Case TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package SOT-23-3
  • Drain to Source Voltage (Vdss) 200 V
  • Vgs(th) (Max) @ Id 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V
  • Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
  • Current - Continuous Drain (Id) @ 25°C 1.7A (Tc)
  • Power Dissipation (Max) 1.5W (Tc)
  • Input Capacitance (Ciss) (Max) @ Vds 580 pF @ 25 V
  • Rds On (Max) @ Id, Vgs 700mOhm @ 1A, 10V