G65P06D5
Part Number:
G65P06D5
Product Classification:
Single FETs, MOSFETs
Manufacturer:
Goford Semiconductor
Description:
P60V,RD(MAX)<18M@-10V,VTH-2V~-3V
Packaging:
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specification
- Part Status Active
- Mounting Type Surface Mount
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- FET Type P-Channel
- Drain to Source Voltage (Vdss) 60 V
- Vgs(th) (Max) @ Id 3.5V @ 250µA
- Current - Continuous Drain (Id) @ 25°C 65A (Tc)
- Power Dissipation (Max) 104W (Tc)
- Gate Charge (Qg) (Max) @ Vgs 75 nC @ 10 V
- Package / Case 8-PowerTDFN
- Rds On (Max) @ Id, Vgs 18mOhm @ 20A, 10V
- Supplier Device Package 8-DFN (4.9x5.75)
- Input Capacitance (Ciss) (Max) @ Vds 6138 pF @ 25 V