GT110N06S
Part Number:
GT110N06S
Product Classification:
Single FETs, MOSFETs
Manufacturer:
Goford Semiconductor
Description:
N60V,RD(MAX)<15M@-4.5V,RD(MAX)<1
Packaging:
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specification
- Part Status Active
- Mounting Type Surface Mount
- Package / Case 8-SOIC (0.154", 3.90mm Width)
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Input Capacitance (Ciss) (Max) @ Vds 1300 pF @ 25 V
- Drain to Source Voltage (Vdss) 60 V
- Current - Continuous Drain (Id) @ 25°C 14A (Tc)
- Gate Charge (Qg) (Max) @ Vgs 24 nC @ 10 V
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Supplier Device Package 8-SOP
- Vgs(th) (Max) @ Id 2.4V @ 250µA
- Power Dissipation (Max) 3W (Tc)
- Rds On (Max) @ Id, Vgs 11mOhm @ 14A, 10V