GT52N10D5
Part Number:
GT52N10D5
Product Classification:
Single FETs, MOSFETs
Manufacturer:
Goford Semiconductor
Description:
N100V,RD(MAX)<7.5M@10V,RD(MAX)<1
Packaging:
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specification
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 100 V
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Vgs(th) (Max) @ Id 2.5V @ 250µA
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Power Dissipation (Max) 100W (Tc)
- Gate Charge (Qg) (Max) @ Vgs 50 nC @ 10 V
- Package / Case 8-PowerTDFN
- Current - Continuous Drain (Id) @ 25°C 71A (Tc)
- Input Capacitance (Ciss) (Max) @ Vds 2870 pF @ 50 V
- Rds On (Max) @ Id, Vgs 7.5mOhm @ 50A, 10V
- Supplier Device Package 8-DFN (4.9x5.75)