IV2Q06060D7Z
Part Number:
IV2Q06060D7Z
Product Classification:
Single FETs, MOSFETs
Manufacturer:
Inventchip
Description:
GEN 2, SIC MOSFET, 650V 60MOHM,
Packaging:
Strip
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specification
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Current - Continuous Drain (Id) @ 25°C 50A (Tc)
- Drain to Source Voltage (Vdss) 650 V
- Supplier Device Package TO-263-7
- Technology SiCFET (Silicon Carbide)
- Drive Voltage (Max Rds On, Min Rds On) 18V
- Power Dissipation (Max) 174W (Tc)
- Vgs(th) (Max) @ Id 4.5V @ 7.5mA
- Vgs (Max) +20V, -5V
- Rds On (Max) @ Id, Vgs 78mOhm @ 15A, 18V
- Gate Charge (Qg) (Max) @ Vgs 94.7 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds 2000 pF @ 400 V
- Package / Case TO-263-7