IV2Q06060T4Z
Part Number:
IV2Q06060T4Z
Product Classification:
Single FETs, MOSFETs
Manufacturer:
Inventchip
Description:
GEN 2, SIC MOSFET, 650V 60MOHM,
Packaging:
Tube
ROHS Status:
Yes
Currency:
USD
Specification
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Current - Continuous Drain (Id) @ 25°C 50A (Tc)
- Drain to Source Voltage (Vdss) 650 V
- Package / Case TO-247-4
- Technology SiCFET (Silicon Carbide)
- Drive Voltage (Max Rds On, Min Rds On) 18V
- Supplier Device Package TO-247-4
- Power Dissipation (Max) 174W (Tc)
- Vgs (Max) +20V, -5V
- Vgs(th) (Max) @ Id 4.5V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs 64 nC @ 18 V
- Rds On (Max) @ Id, Vgs 53mOhm @ 15A, 18V
- Input Capacitance (Ciss) (Max) @ Vds 1218 pF @ 600 V