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specifications
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Part Status
Active
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Grade
-
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Qualification
-
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Mounting Type
Through Hole
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Operating Temperature
-55°C ~ 175°C (TJ)
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Package / Case
TO-220-3
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Supplier Device Package
TO-220AB
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FET Type
N-Channel
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Technology
GaNFET (Gallium Nitride)
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Drain to Source Voltage (Vdss)
650 V
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Current - Continuous Drain (Id) @ 25°C
13A (Tc)
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Drive Voltage (Max Rds On, Min Rds On)
10V
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Rds On (Max) @ Id, Vgs
150mOhm @ 10A, 10V
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Vgs(th) (Max) @ Id
1V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs
8 nC @ 6 V
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Vgs (Max)
±20V
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Input Capacitance (Ciss) (Max) @ Vds
598 pF @ 400 V
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Power Dissipation (Max)
300W (Tc)
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FET Feature
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