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AMTP65H150G4PS
Part number:
AMTP65H150G4PS
manufacturer:
describe:
GAN FET N-CH 650V TO-220
package:
Tube
ROHS status:
Yes
currency:
USD
BUY NOW add to cart
inventory 1601
minimum : 1
quantity
unit price
price
1
6.61
6.61
50
5.28
264
100
4.72
472
500
4.17
2085
1000
3.75
3750
specifications
  • Part Status
    Active
  • Grade
    -
  • Qualification
    -
  • Mounting Type
    Through Hole
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Package / Case
    TO-220-3
  • Supplier Device Package
    TO-220AB
  • FET Type
    N-Channel
  • Technology
    GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss)
    650 V
  • Current - Continuous Drain (Id) @ 25°C
    13A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Rds On (Max) @ Id, Vgs
    150mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id
    1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs
    8 nC @ 6 V
  • Vgs (Max)
    ±20V
  • Input Capacitance (Ciss) (Max) @ Vds
    598 pF @ 400 V
  • Power Dissipation (Max)
    300W (Tc)
  • FET Feature
    -