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G2R1000MT17J
Part number：
G2R1000MT17J
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
GeneSiC Semiconductor
describe：
SIC MOSFET N-CH 3A TO263-7
package：
Tube
ROHS status：
Yes
currency：
USD
PDF:
BUY NOW add to cart
inventory 3474
minimum : 1
quantity
unit price
price
1
6.44
6.44
10
5.77
57.7
25
5.52
138
100
5.17
517
250
4.95
1237.5
500
4.79
2395
1000
4.63
4630
specifications
  • Part Status
    Active
  • Grade
    -
  • Qualification
    -
  • Mounting Type
    Surface Mount
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Package / Case
    TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
  • Supplier Device Package
    TO-263-7
  • FET Type
    N-Channel
  • Technology
    SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss)
    1700 V
  • Current - Continuous Drain (Id) @ 25°C
    3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    20V
  • Rds On (Max) @ Id, Vgs
    1.2Ohm @ 2A, 20V
  • Vgs(th) (Max) @ Id
    4V @ 2mA
  • Vgs (Max)
    +20V, -10V
  • Input Capacitance (Ciss) (Max) @ Vds
    139 pF @ 1000 V
  • Power Dissipation (Max)
    54W (Tc)
  • FET Feature
    -
  • 18098902467

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