collect compare
GA10SICP12-263
Part number：
GA10SICP12-263
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
GeneSiC Semiconductor
describe：
TRANS SJT 1200V 25A D2PAK
package：
Tube
ROHS status：
Yes
currency：
USD
PDF:
BUY NOW add to cart
inventory 1600
minimum : 500
quantity
unit price
price
500
24.44
12220
specifications
  • Part Status
    Active
  • Grade
    -
  • Qualification
    -
  • Mounting Type
    Surface Mount
  • Operating Temperature
    175°C (TJ)
  • Package / Case
    TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
  • Supplier Device Package
    TO-263-7
  • FET Type
    -
  • Technology
    SiC (Silicon Carbide Junction Transistor)
  • Drain to Source Voltage (Vdss)
    1200 V
  • Current - Continuous Drain (Id) @ 25°C
    25A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    -
  • Rds On (Max) @ Id, Vgs
    100mOhm @ 10A
  • Vgs(th) (Max) @ Id
    -
  • Vgs (Max)
    -
  • Input Capacitance (Ciss) (Max) @ Vds
    1403 pF @ 800 V
  • Power Dissipation (Max)
    170W (Tc)
  • FET Feature
    -
  • 18098902467

{{ boxName }} ({{ dataList?.length || 0 }} Items)

{{ val.part_number }}

{{ val.manufacturer || val.en_manufacturer || '' }}

quantity: {{ val.quantity }}

submit

it was empty.