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GA20SICP12-247
Part number：
GA20SICP12-247
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
GeneSiC Semiconductor
describe：
TRANS SJT 1200V 45A TO247AB
package：
Tube
ROHS status：
Yes
currency：
USD
PDF:
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inventory 1600
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specifications
  • Part Status
    Obsolete
  • Grade
    -
  • Qualification
    -
  • Mounting Type
    Through Hole
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Package / Case
    TO-247-3
  • Supplier Device Package
    TO-247AB
  • FET Type
    -
  • Technology
    SiC (Silicon Carbide Junction Transistor)
  • Drain to Source Voltage (Vdss)
    1200 V
  • Current - Continuous Drain (Id) @ 25°C
    45A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    -
  • Rds On (Max) @ Id, Vgs
    50mOhm @ 20A
  • Vgs(th) (Max) @ Id
    -
  • Vgs (Max)
    -
  • Input Capacitance (Ciss) (Max) @ Vds
    3091 pF @ 800 V
  • Power Dissipation (Max)
    282W (Tc)
  • FET Feature
    -
  • 18098902467

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