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GA50JT06-258
Part number：
GA50JT06-258
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
GeneSiC Semiconductor
describe：
TRANS SJT 600V 100A TO258
package：
Bulk
ROHS status：
Yes
currency：
USD
PDF:
BUY NOW add to cart
inventory 1600
minimum : 10
quantity
unit price
price
10
577.5
5775
specifications
  • Part Status
    Active
  • Grade
    -
  • Qualification
    -
  • Mounting Type
    Through Hole
  • Operating Temperature
    -55°C ~ 225°C (TJ)
  • Package / Case
    TO-258-3, TO-258AA
  • Supplier Device Package
    TO-258
  • FET Type
    -
  • Technology
    SiC (Silicon Carbide Junction Transistor)
  • Drain to Source Voltage (Vdss)
    600 V
  • Current - Continuous Drain (Id) @ 25°C
    100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    -
  • Rds On (Max) @ Id, Vgs
    25mOhm @ 50A
  • Vgs(th) (Max) @ Id
    -
  • Vgs (Max)
    -
  • Power Dissipation (Max)
    769W (Tc)
  • FET Feature
    -
  • 18098902467

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