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GCMX020B120S1-E1
Part number:
GCMX020B120S1-E1
manufacturer:
describe:
SIC 1200V 20M MOSFET SOT-227
package:
Tube
ROHS status:
Yes
currency:
USD
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inventory 1640
minimum : 1
quantity
unit price
price
1
31.8
31.8
10
23.41
234.1
100
20.33
2033
specifications
  • Part Status
    Active
  • Grade
    -
  • Qualification
    -
  • Mounting Type
    Chassis Mount
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Package / Case
    SOT-227-4, miniBLOC
  • Supplier Device Package
    SOT-227
  • FET Type
    N-Channel
  • Technology
    SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss)
    1200 V
  • Current - Continuous Drain (Id) @ 25°C
    113A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    20V
  • Rds On (Max) @ Id, Vgs
    28mOhm @ 50A, 20V
  • Vgs(th) (Max) @ Id
    4V @ 20mA
  • Gate Charge (Qg) (Max) @ Vgs
    216 nC @ 20 V
  • Vgs (Max)
    +25V, -10V
  • Input Capacitance (Ciss) (Max) @ Vds
    5349 pF @ 1000 V
  • Power Dissipation (Max)
    395W (Tc)
  • FET Feature
    -