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GP2T030A170H
Part number：
GP2T030A170H
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
SemiQ
describe：
SIC MOSFET
package：
Tube
ROHS status：
Yes
currency：
USD
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inventory 1627
minimum : 1
quantity
unit price
price
1
28.23
28.23
10
20.63
206.3
100
17.5
1750
specifications
  • Part Status
    Active
  • Grade
    -
  • Qualification
    -
  • Mounting Type
    Through Hole
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Package / Case
    TO-247-4
  • Supplier Device Package
    TO-247-4
  • FET Type
    N-Channel
  • Technology
    SiC (Silicon Carbide Junction Transistor)
  • Drain to Source Voltage (Vdss)
    1700 V
  • Current - Continuous Drain (Id) @ 25°C
    83A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    20V
  • Rds On (Max) @ Id, Vgs
    36mOhm @ 60A, 20V
  • Vgs(th) (Max) @ Id
    4V @ 20mA
  • Gate Charge (Qg) (Max) @ Vgs
    233 nC @ 20 V
  • Vgs (Max)
    +25V, -10V
  • Input Capacitance (Ciss) (Max) @ Vds
    6202 pF @ 1.2 kV
  • Power Dissipation (Max)
    564W (Tc)
  • FET Feature
    -
  • 18098902467

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