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GP3T016A120H
Part number：
GP3T016A120H
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
SemiQ
describe：
GEN3 1200V, 16M SIC MOSFET, TO-2
package：
Tube
ROHS status：
Yes
currency：
USD
PDF:
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inventory 1650
minimum : 1
quantity
unit price
price
1
12.87
12.87
10
8.99
89.9
100
6.79
679
500
6.4
3200
specifications
  • Part Status
    Active
  • Grade
    -
  • Qualification
    -
  • Mounting Type
    Through Hole
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Package / Case
    TO-247-4
  • Supplier Device Package
    TO-247-4
  • FET Type
    N-Channel
  • Technology
    SiC (Silicon Carbide Junction Transistor)
  • Drain to Source Voltage (Vdss)
    1200 V
  • Current - Continuous Drain (Id) @ 25°C
    132A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    18V
  • Rds On (Max) @ Id, Vgs
    23mOhm @ 50A, 18V
  • Vgs(th) (Max) @ Id
    4V @ 20mA
  • Gate Charge (Qg) (Max) @ Vgs
    260 nC @ 18 V
  • Vgs (Max)
    +22V, -8V
  • Input Capacitance (Ciss) (Max) @ Vds
    6779 pF @ 1000 V
  • Power Dissipation (Max)
    484W (Tc)
  • FET Feature
    -
  • 18098902467

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