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IV1Q06060T3G
Part number：
IV1Q06060T3G
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
Inventchip
describe：
SIC MOSFET, 650V 60MOHM, TO247-3
package：
Tube
ROHS status：
Yes
currency：
USD
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inventory 1600
minimum : 120
quantity
unit price
price
120
4.88
585.6
specifications
  • Part Status
    Active
  • Mounting Type
    Through Hole
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Package / Case
    TO-247-3
  • Supplier Device Package
    TO-247-3
  • FET Type
    N-Channel
  • Technology
    SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss)
    650 V
  • Current - Continuous Drain (Id) @ 25°C
    50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    20V
  • Rds On (Max) @ Id, Vgs
    80mOhm @ 15A, 20V
  • Vgs(th) (Max) @ Id
    5V @ 3.9mA
  • Gate Charge (Qg) (Max) @ Vgs
    69.5 nC @ 20 V
  • Vgs (Max)
    +20V, -5V
  • Input Capacitance (Ciss) (Max) @ Vds
    1640 pF @ 800 V
  • Power Dissipation (Max)
    227W (Tc)
  • FET Feature
    -
  • 18098902467

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