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TPH3206LDGB
Part number：
TPH3206LDGB
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
Transphorm
describe：
GANFET N-CH 650V 16A PQFN
package：
Tube
ROHS status：
Yes
currency：
USD
PDF:
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inventory 1600
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specifications
  • Part Status
    Obsolete
  • Grade
    -
  • Qualification
    -
  • Mounting Type
    Surface Mount
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Package / Case
    3-PowerDFN
  • Supplier Device Package
    3-PQFN (8x8)
  • FET Type
    N-Channel
  • Technology
    GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss)
    650 V
  • Current - Continuous Drain (Id) @ 25°C
    16A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Rds On (Max) @ Id, Vgs
    180mOhm @ 11A, 8V
  • Vgs(th) (Max) @ Id
    2.6V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs
    9.3 nC @ 4.5 V
  • Vgs (Max)
    ±18V
  • Input Capacitance (Ciss) (Max) @ Vds
    760 pF @ 480 V
  • Power Dissipation (Max)
    81W (Tc)
  • FET Feature
    -
  • 18098902467

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